Dual functions of anti-reflectance and surface passivation of the atomic layer deposited Al2O3 films on crystalline silicon substrates

摘要

Surface anti-reflectance and passivation properties of the Al2O3 filmsdeposited on crystalline Si substrates by atomic layer deposition areinvestigated. Textured Si with 100 nm Al2O3 shows a very low averagereflectance of ~2.8 %. Both p-type and n-type Si wafers are well passivated byAl2O3 films. The maximal minority carrier lifetimes are improved from ~10{\mu}s before Al2O3 passivation to above 3 ms for both p-type and n-type Siafter Al2O3 passivation layer deposition and annealing at an appropriatetemperature. Our results indicate the dual functions of anti-reflectance andsurface passivation in c-Si solar cell applications.